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| 氧离子束辅助激光淀积生长ZnO/Si的研究 | |
| 引用本文： | 李庚伟,吴正龙,邵素珍,张建辉,刘志凯.氧离子束辅助激光淀积生长ZnO/Si的研究[J].材料导报,2005,19(2):109-111. |
| 作者姓名： | 李庚伟 吴正龙 邵素珍 张建辉 刘志凯 |
| 作者单位： | 1. 中国地质大学材料科学与工程学院,北京,100083 2. 北京师范大学分析测试中心,北京,100875 3. 北京市第四十七中学,北京,100090 4. 中国科学院半导体材料科学实验室,北京,100083 |
| 基金项目： | 国家高技术研究发展计划(863计划) |
| 摘 要： | 利用X射线衍射(XRD),X射线摇摆曲线(XRC)和X射线光电子能谱(XPS)分析方法对氧离子束辅助激光淀积生长的ZnO/Si异质结薄膜进行了分析.结果表明:用该法可生长出高度c轴单一取向ZnO薄膜,XRC的半高宽度(FWHM)仅为2.918°.表明此生长方法经优化,可生长出单晶质量很好的ZnO/Si薄膜. |
| 关 键 词： | ZnO/Si异质结构 氧离子束辅助PLD X射线衍射 X射线摇摆曲线分析 X射线光电子能谱 半高宽度c轴单一取向 |
Studies on ZnO/Si Grown by O+-assisted PLD |
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| LI Gengwei School of Materials Science and Technology,China University of Geosciences,Beijing ,WU Zhenglong Analytical and Testing Center,Beijing Normal University,Beijing ,SHAO Suzhen Beijing No. Middle School,Beijing ,ZHANG Jianhui LIU Zhikai Laboratory of semiconductor Materials Science,Chinese Academy of Sciences,Beijing.Studies on ZnO/Si Grown by O+-assisted PLD[J].Materials Review,2005,19(2):109-111. | |
| Authors: | LI Gengwei School of Materials Science and Technology China University of Geosciences Beijing WU Zhenglong Analytical and Testing Center Beijing Normal University Beijing SHAO Suzhen Beijing No Middle School Beijing ZHANG Jianhui LIU Zhikai Laboratory of semiconductor Materials Science Chinese Academy of Sciences Beijing |
| Affiliation: | LI Gengwei School of Materials Science and Technology,China University of Geosciences,Beijing 100083,WU Zhenglong Analytical and Testing Center,Beijing Normal University,Beijing 100875,SHAO Suzhen Beijing No.47 Middle School,Beijing 100090,ZHANG Jianhui LIU Zhikai Laboratory of semiconductor Materials Science,Chinese Academy of Sciences,Beijing 100083 |
| Abstract: | |
| Keywords: | ZnO/Si heterostrueture O~+-assisted pulsed laser deposition X-ray diffraction(PLD) X-ray rocking curve X-ray photoelectron spectroscopy full width of half height c-axis aligned |
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