| 长波长垂直腔面发射激光器 |
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| 引用本文： | Yan Chang-ling Ning Yong-qiang Qin Li,Liu Yun Wang Qing Zhao Lu-min Sun Yan-fang Jin Zhen-hua Tao Ge-tao Wang
Chao Liu Jun Wang Lijun Zhong Jingchang.长波长垂直腔面发射激光器[J].光机电信息,2004(4):1-12. |
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| 作者姓名： | Yan Chang-ling Ning Yong-qiang Qin Li Liu Yun Wang Qing Zhao Lu-min Sun Yan-fang Jin Zhen-hua Tao Ge-tao Wang
Chao Liu Jun Wang Lijun Zhong Jingchang |
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| 作者单位： | Yan Chang-ling*1，2，Ning Yong-qiang1，Qin Li1，Liu Yun1，Wang Qing1，Zhao Lu-min1，Sun Yan-fang1，Jin Zhen-hua1，Tao Ge-tao1，Wang Chao1，Liu Jun1，Wang Lijun1，Zhong Jingchang1.Laboratory of Excited State Processes，Chinese Academy of Sciences，Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033，China;2.Changchun University of Science and Technology，State Key Lab of High Power Semiconductor Laser，Changchun 130022，China |
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| 摘 要： | 给出了长波长垂直腔面发射激光器的器件结构的发展现状，同时对GaInNAs／GaAs垂直腔面发射激光器进行了详细的介绍。最后，给出了所设计的新型1.3μm GaInNAs/GaAs长波长垂直外腔面发射半导体激光器的结构设计，有源区量子阱由980nm半导体激光二极管进行泵浦。这种器件设计实现了激光二极管泵浦与长波长垂直腔面发射激光器的有机结合，同时具有两者的优点。此外，本文还对器件的阈值特性和光输出功率进行了理论计算。
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| 关 键 词： | 长波长 垂直腔面 激光器 结构设计 激光二极管 阈值 |
Long wavelength vertical cavity surface emitting lasers |
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| YAN Chang-ling,NING Yong-Qiang,Qin Li,Liu Yun,Wang Qing,Zhao Lu-min,Sun Yan-fang,JIN Zhen-hua,Tao Ge-tao,Wang Chao,Liu Jun,Wang Lijun,Zhong Jingchang.Long wavelength vertical cavity surface emitting lasers[J].OME Information,2004(4):1-12. |
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| Authors: | YAN Chang-ling NING Yong-Qiang Qin Li Liu Yun Wang Qing Zhao Lu-min Sun Yan-fang JIN Zhen-hua Tao Ge-tao Wang Chao Liu Jun Wang Lijun Zhong Jingchang |
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| Affiliation: | 1. Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;Changchun University of Science and Technology, State Key Lab of High Power
2. Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China |
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| Abstract: | The recent studies of structural properties of long wavelength vertical cavity surfaceemitting lasers (VCSELs) are presented, and the GaInNAs/GaAs VCSELs are also reviewed in detail.Finally,a novel design of a diode-pumped long wavelength vertical-external-cavity surface-emittingsemiconductor laser (DP-VECSESL) with GaInNAs/GaAs multiple quantum wells at 1.3μm as anactive region optically pumped by 980nm diode laser is described. The device design realizes theintegrating diode-pumped lasers with the long wavelength VCSEL structure,featuring the advantagesof the both. The characteristics such as threshold condition and output power are calculated theoretically. |
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| Keywords: | vertical cavity surface emitting laser GaInNAs/GaAs diode pumped device vertical external cavity surface emitting laser |
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