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Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation
Authors:Patel  Sapna  Kumar  Dushyant  Chaurasiya  Nitesh Kumar  Tripathi  Shweta
Affiliation:1.Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, 211004, Allahabad, India
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Abstract:Semiconductors - In the present paper, analytical modeling of surface potential and drain current for hetero-dielectric double gate tunnel FET (HDG-TFET) has been done. The two dimensional (2D)...
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