Multiple-input logic circuit design using BiCMOS-based negative differential resistance circuits |
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Authors: | Kwang-Jow Gan Cher-Shiung Tsai Shih-Hao Liu |
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Affiliation: | 1. Department of Electrical Engineering, National Chiayi University, No. 300 Syuefu Rd., Chiayi City, 60004, Taiwan, ROC 2. Department of Electronic Engineering, Kun Shan University, 949 Da-Wan Rd., Yung-Kang City, 710, Tainan Hsien, Taiwan, ROC
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Abstract: | We first propose an inverter circuit design using the negative differential resistance (NDR) circuit composed of the standard Si-based n-channel metal-oxide-semiconductor field-effect-transistor (NMOS) and SiGe-based heterojunction bipolar transistor (HBT). By suitably designing the MOS width/length parameters, we can obtain the ??-type NDR current?Cvoltage (I?CV) characteristic. Expanding the inverter circuit operation, the two-input and four-input NOR logic gates are demonstrated. Especially, the design and fabrication of the logic circuit is based on the standard SiGe BiCMOS process. Compared to the traditional NDR device like resonant tunneling diode (RTD), our MOS?CHBT?CNDR-based applications are much easier to be combined with some Si-based or SiGe-based devices on the same chip. |
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