| HBr反应离子刻蚀硅深槽 |
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| 引用本文： | 刘家璐,王清平.HBr反应离子刻蚀硅深槽[J].微电子学,1995,25(4):39-44. |
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| 作者姓名： | 刘家璐 王清平 |
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| 作者单位： | 西安电子科技大学，电子工业部第２４研究所 |
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| 摘 要： | 对ＨＢｒ反应离子刻蚀硅和ＳｉＯ２进行了实验研究。介绍了ＨＢｒ等离子体的刻蚀特性，讨论了ＨＢｒ反应离子刻蚀硅的刻蚀机理，研究了ＨＢｒ中微量氧、碳对ＨＢｒＲＩＥ刻蚀过程的影响。实验表明，ＨＢｒ是一种刻蚀硅深槽理想的含原子溴反应气体。采用ＨＢｒＲＩＥ，可获得高选择比（对Ｓｉ／ＳｉＯ２）和良好的各向异性。
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| 关 键 词： | 反应离子刻蚀 硅槽刻蚀 集成电路 |
Reactive Ion Etching of silicon Trench With HBr |
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| Liu Jialu,Zhang Tingqing and Liu Huayu.Reactive Ion Etching of silicon Trench With HBr[J].Microelectronics,1995,25(4):39-44. |
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| Authors: | Liu Jialu Zhang Tingqing and Liu Huayu |
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| Abstract: | An experiment was conducted on reactive ion etching(RIE)of Si/SiO_2 with HBr.The etching behavior of HBr plasma and the mechanism of RIE with HBr are investigated in the paper. Also studied is the effect of trace impurities,such as O_2 and C,on the HBr RIE process. The exper-iment indicates that HBr is an ideal bromine containing reactive gas for etching of silicon trench.Both high selectivity (to Si/SiO_2)and excellent anisotropy can be obtained for trench etching by usingHBrRIE. |
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| Keywords: | Reactive ion etching Si-trench etching IC process |
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