Varistor and dielectric properties of SiO2 doped SnO2-Zn2SnO4 ceramic composites |
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| Affiliation: | 1. Department of Material Science and Engineering, I-Shou University, Kaohsiung, 840 Taiwan;2. Department of Electronic Engineering, National Formosa University, Huwei, Yunlin, 632 Taiwan;1. Mineral Resources Research Division, Korea Institute of Geoscience and Mineral Resources, Yuseong-gu, Daejeon 305-350, Republic of Korea;2. Korea University of Science and Technology, Gajeong-ro, Yuseong-gu, Daejeon 305-350, Republic of Korea;1. Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France;2. CRHEA, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France;1. Taras Shevchenko National University of Kyiv, Prospekt Akademika Glushkova 4, Kyiv 03127, Ukraine;2. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan;1. Dept. of Basic Sciences and Humanities, Marathwada Institute of Technology, Aurangabad, India;2. Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad, 431004 Maharashtra, India;3. Department of Physics, MES Abasaheb Garware College Pune, 411004, India;4. Department of Physics, Savitribai Phule Pune University, Pune 411007, Maharashtra, India |
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| Abstract: | In this work, SiO2 doped SnO2-Zn2SnO4 ceramic composites with excellent varistor and dielectric properties were prepared through traditional ceramic processing. The obtained nonlinear coefficient α was as high as 9.6, and the breakdown electrical field EB and leakage current density JL was as low as 5.9 V/mm and 62 μA/cm2, respectively. At a low frequency of 40 Hz, the relative permittivity εr measured at room temperature was higher than 2.5×104. The nonlinear decrease of the semicircle diameter in the complex impedance spectra with increasing DC bias voltage indicates that the grain boundary effect is an important origin of the varistor and giant permittivity properties. With an increase of temperature, the relaxor peak of the imaginary part M″ of the complex electric modulus shifted to high frequency and the activation energy Ea obtained from the M″ spectrum was about 0.31 eV, much lower than the grain boundary barrier height ?b. The results suggest that other mechanisms may also be responsible for the giant permittivity property besides grain boundary barriers. |
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| Keywords: | Varistors Electroceramics Dielectric properties |
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