Microstructure-related piezoelectric properties of a ZnO film grown on a Si substrate |
| |
| Affiliation: | 1. Universidade do Algarve, FCT, DQF, and CIQA, 8005-139 Faro, Portugal;2. Department of Physics, University of Puerto Rico, Rio Piedras, PO Box 23343, San Juan, PR 00931-3343, USA;1. Key Laboratory of Photonic and electronic Bandgap materials of Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, People''s Republic of China;2. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, People''s Republic of China;1. State Key Laboratory of Integrated Service Networks, School of Telecommunications Engineering, Xidian University, Xi''an 710071, China;2. School of Physics and Optoelectronic Engineering, Xidian University, Xi''an 710071, China;1. Materials Science and Chemical Engineering Center, Institute for Advanced Engineering, Republic of Korea;2. Department of Materials Science and Engineering, Korea University, Republic of Korea;3. Department of Materials Science and Chemical Engineering, Hanyang University, Republic of Korea |
| |
| Abstract: | We investigated the effect of grain size on the piezoelectric properties of ZnO using films of different grain sizes and a fixed thickness of 800 nm deposited on a Si substrate by pulsed laser ablation in the temperature range of 300–700 °C. All of the deposited films have a crystal structure with a c-axis orientation. The grain size of the grown films, characterized by transmission electron microscopy (TEM), increases with the deposition temperature. In contrast, their piezoelectric efficiency (PE, d33), characterized by piezoelectric force microscopy (PFM), was found to initially increase with the deposition temperature up to 500 °C, after which it decreased with further increases in temperature. The maximum PE value is observed for the film deposited at 500 °C with a grain size of approximately 60 nm. The peculiar PE behavior observed was theoretically explained by a competition between the contribution of the c-axis orientation favoring a larger d33 value due to the enhanced static asymmetry and the strong grain size effect that influences the piezoelectric polarization as a result of domain motion. |
| |
| Keywords: | Grain size Pulsed laser ablation ZnO thin film Piezoelectric efficiency |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
