GaAs中S_2+分子离子注入(英文)

Molecular Ion S_2+ Implantation into GaAs

Molecular ion S2+ implantation into GaAs has been investigated to form very thin active layers. After implantation, the transient annealing(TA) and furnace annealing (FA) were used. The measurements of activation efficiency, mobility, carrier concentration profiles were carried out. The experiments show that after TA, the activation efficiency, mobility and carrier distribution are almost the same between S+ and S2+ implanted samples with an implantation energy of 50keV and 100keV,adose of 3×1013 cm-2 and 1.5×1013cm-2 respectively.It shows that the damage of S2+-implan-ted samples can be removed by TA, and a very thin active layer can be formed by the implantation of S2+ at 50keV.