Well-defined electrical properties of high-strain resonant interband tunneling structure |
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| Authors: | Chih Chin Yang Yan Kuin Su |
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| Affiliation: | a Department of Microelectronics Engineering, National Kaohsiung Marine University, 81143 Kaohsiung, Taiwan, Republic of China
b Department of Electrical Engineering, National Cheng Kung University, 701 Tainan, Taiwan, Republic of China |
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| Abstract: | The GaAs/InAs high-strain resonant interband tunneling diodes (HSRITDs) have been implemented by metal organic chemical vapor deposition (MOCVD). The current-voltage characteristics of variable quantum well and barrier thickness grown on (1 1 1) GaAs substrates are investigated. Experimental results reveal that the quantum barrier and well layer will influence current-voltage properties such as the peak current density, valley current density, and peak-to-valley current ratio (PVCR). Both peak current and valley current density decrease with increasing layers width. This result also exhibits the variation of PVCR with layers width. |
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| Keywords: | GaAs/InAs Interband tunneling Current density |
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