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Preparation of CuInSe2 thin films with large grain by excimer laser ablation |
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| Authors: | A Yoshida N Tanahashi T Tanaka Y Demizu Y Yamamoto T Yamaguchi |
| Affiliation: | a Department of Electrical and Electronic Engineering, Tovohashi University ol Technology, Tempaku-cho, Toyohashi, 441, Japan b Department of Electrical Engineering, Fukui College of Technology, Geshi-cho, Sabae, 916, Japan c Department of Electrical Engineering, Wakavama College of Technology, Nada-cho, Gobo, 644, Japan |
| Abstract: | Thin films of CuInSez (CIS) were prepared by XeCl excimer laser ablation on glass substrates. The deposition was carried out at 550°C and the target-substrate distance was changed from 15 to 60 mm. From XRD and EPMA measurements, all films showed the single-phase and stoichiometric chalcopyrite structure, independent of the distance. The deposition rate was large with the small distance. The surface morphology and cross-sectional SEM images were observed. The electrical conductivity measurements gave p-type conduction, and the mobility was improved with the smaller distance. |
| Keywords: | CuInSe2 Thin films Excimer laser ablation |
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