SiC发光特性及其调控研究进展

碳化硅(SiC)作为第三代半导体的代表材料,具有禁带宽度大、热导率高和临界击穿电场高等特点,所制备的光电器件在高温、强辐射等极端、恶劣条件下有巨大的应用潜力。本文综述了国内外SiC发光性质的研究现状,介绍SiC发光的实际应用,阐述了单晶、纳米晶和薄膜不同形态SiC的制备方法及发光特点,并对SiC发光调控的研究进展进行了探讨与展望。利用新兴技术手段,可实现对SiC发光光谱和发光效率等性质的调控。

Progress in Research on Luminescence Properties and Modification of SiC

As a typical material of the third-generation semiconductor with wide band gap ,high ther-mal conductivity and high critical breakdown electric field ,silicon carbide(SiC) has a huge potential in the applications of photoelectric devices that can work in some extreme conditions ,such as in a high temperature or intense radiation environment . Here ,the research status of luminescence properties and applications of SiC was summarized .The preparation methods and characteristic luminescence of monocrystal ,nanocrystalline and thin film of SiC were presented .Besides ,the progress and prospect of SiC luminescence control was also discussed in this paper .Utilizing the emerging technologies ,we will be able to modify SiC's properties like luminescence spectrum and efficiency .