Improved direct bonding method of Nd:YVO4 and YVO4 laser crystals

We succeeded in the fabrication of bonded laser crystals composed of a neodymium-doped YVO₄ laser crystal (Nd:YVO₄) and its host crystals YVO₄ by a newly developed dry etching technique using an argon ion beam. The optical distortion caused by the bonded interface of size 5 mm × 6 mm was estimated to be 0.05λ at 633 nm. From the comparison of laser performance pumped by a laser diode, the bonded crystals could increase the laser output power by nearly twice that of the non-bonded crystals with the same degree of polarization of 99.2%. To analyze the mechanism of the enhanced reduction of the thermal load in the bonded crystals, numerical simulations with a finite-element method were also performed.