Ni2+掺杂ZnO薄膜及粉体的结构和发光性能研究

采用激光脉冲沉积法,用XeCl准分子激光器在Si (100)基片、真空和5Pa氧气气氛下制备了Ni2+(0.8％(原子分数))掺杂的呈六角纤锌矿结构的ZnO薄膜.氧气气氛下制备的薄膜沿(002)取向生长,表面比较平整,平均颗粒尺寸为80nm.真空条件下制备的薄膜出现Zn2SiO4杂相,平均颗粒尺寸为150nm.和真空条件下制备的薄膜相比,氧气气氛下制备的薄膜具有较强的ZnO本征发光,在425nm附近出现由于填隙Zn缺陷引起的较宽的蓝光发光带,并且在482nm处出现了由于氧空位和氧间隙间的转换引起的较强的蓝光发光峰,同时由于氧缺陷引起的449nm附近的蓝光发光峰强度明显降低.

Structural and optical properties of Ni2+-doped ZnO thin films and powder

Ni2+-doped ZnO(0.8at%) thin films that show the single-phase wurtzite(hexagonal) structure were grown on single-crystalline silicon(100) substrates by means of pulsed laser deposition using an XeCl excimer laser under vacuum and a 5 Pa oxygen atmosphere.Under the oxygen atmosphere,thin film grows along the direction of(002) and has a smooth surface;the average particle size of thin film is 80 nm.The thin films prepared under vacuum atmosphere appear impurity phase that is Zn2SiO4,and the average particle size of thin film is 150 nm.Compared with the thin film prepared under vacuum atmosphere,the thin film prepared under the oxygen atmosphere has more obvious intrinsic emission peak and shows the blue-violet emission located at 425 nm which is ascribed to an electronic transition between the donor level of interstitial Zn and the valence band.And it shows a strong blue emission peak at 482 nm,which is attributed to the transition between the vacancy of oxygen and interstitial oxygen.Meanwhile the intensity of the blue emission peak at 449 nm from oxygen defects greatly reduces.