CHF3双频电容耦合放电等离子体特性研究

研究了用于SiCOH 低介电常数薄膜刻蚀的CHF₃气体在1356 MHz/2 MHz，2712 MHz/2 MHz和60 MHz/2 MHz双频电容耦合放电时的等离子体性质.发现2 MHz低频源功率的增大主要导致F基团密度的增大；而高频频率从1356，2712增大到60 MHz，导致CF₂基团的密度增大和电极之间F基团密度的轴向空间不均匀性增加.根据电子温度的分布规律及离子能量随高频源频率的变化关系，提出CF₂基团的产生主要通过电子-中性气体碰撞，而F基团的产生是离子-中性气体碰撞的结果. 关键词： 双频电容耦合放电 3等离子体')" href="#">CHF₃等离子体

CHF_3 dual-frequency capacitively coupled plasma

This paper investigates the intermediate gas phase in the CHF3 dual-frequency capacitively couple plasma(DF-CCP) driven by the high-frequency(HF) of 13.56 MHz,27.12 MHz or 60 MHz and the low-frequency(LF) of 2 MHz power sources,which was used to etch the SiCOH low dielectric constant(low-k) films.The increasing of 2 MHz LF power led to the increase of F radical concentration,and the increasing of HF frequency from 13.56 MHz and 27.12 MHz to 60 MHz led to the increase of CF2 concentration and a poor spatial ...