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Microstructure,optical and magnetic properties of Zr-doped SnO synthesized by the hydrothermal method
Affiliation:1. Department of Applied Physics, Institute of Advanced Materials Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin, 300072, People''s Republic of China;2. National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, People''s Republic of China;3. School of Physics, Nanjing University, Nanjing, 210093, People''s Republic of China
Abstract:Sn1?xZrxO was successfully synthesized by the one-step hydrothermal method. X-ray diffraction and Raman patterns reveal that the lattice distortion of SnO occurs with an increase in Zr concentration, and Zr ions are located at the substituted (ZrSn) and interstitial (Zri) sites successively. Scanning electron microscope and transmission electron microscope images showed that Zr concentration does not affect the well-crystalline nature of Sn1?xZrxO. However, the system's morphology changes from three-dimensional flowerlike to two-dimensional sheetlike. Furthermore, X-ray photoelectron spectroscopy and Raman spectra indicate that there are inherent oxygen vacancies (VO) in pure SnO lattice. UV–Visible absorption spectra show that the optical bandgap first decreases and then increases with Zr doping, which is explained by the sp–d exchange interactions in the case of ZrSn and the BursteinMoss effect in the case of Zri. Additionally, Sn1?xZrxO samples exhibit room temperature ferromagnetism (RTFM), and the magnetic variation couples with the variation of the relative intensity of the Raman vibration modes. From the experimental results and the first-principles calculations, it can be seen that VO and the exchange interaction between Zr 4d and O 2p states are accountable for the RTFM of Sn1?xZrxO. Meanwhile, the lattice distortion and the Zr–O–Zr super-exchange interaction caused by excessive doping could decrease FM.
Keywords:Zr-doped SnO  Room temperature ferromagnetism  First-principles calculations  Dilute magnetic semiconductors
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