工作在1.8-3 GHz内的高效率GaAs pHEMT功率单片

本文报道了一款基于南京电子器件研究所GaAs pHEMT单片集成电路工艺的S波段宽带高效率功率放大器。为了提高芯片效率,该放大器采用驱动比为1:8的两级级联方式,并采用低通/高通滤波器相结合的拓扑结构设计每级的匹配电路。这种匹配电路在有效降低芯片面积的同时,在较宽的频带范围内实现对应于高效率的阻抗匹配。在5V漏压AB类偏置条件下,该功率放大器在1.8到3GHz频率范围内连续波输出饱和功率为33~34 dBm,相应的附加效率达到35%~45%,以及非常平坦的功率增益25~26 dB。芯片面积紧凑,尺寸仅为2.7mm×2.75mm。

A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute's GaAs pHEMT monolithic microwave integrated circuit(MMIC) technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1:8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33-34 dBm saturated output power across the frequency range of 1.8 to 3 GHz with associated power-added efficiency of 35%-45% and very flat power gain of 25-26 dB in CW mode. The size of this MMIC is very compact with 2.7×2.75 mm².