| 晶片键合在AlGaInP发光二极管中的应用 |
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| 引用本文： | 潘教青,黄柏标.晶片键合在AlGaInP发光二极管中的应用[J].激光与光电子学进展,2003,40(7):50-53. |
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| 作者姓名： | 潘教青 黄柏标 |
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| 作者单位： | 山东大学晶体材料国家重点实验室,济南,250100 |
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| 摘 要： | (AlxGa1-x)0.5In0.5P高亮度发光二极管是在GaAs衬底上匹配外延的，它的外量子效率受限于吸收光线的GaAs衬底。LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。本文对上述三种晶片键合的器件制备过程和器件特点进行了描述。
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| 关 键 词： | 晶片键合 AlGaInP 发光二极管 GaAs衬底 LED |
| 收稿时间： | 2003/3/4 |
Application of wafer bonding in AlGaInP high brightness LED devices |
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| PAN Jiaoqing,HUANG Baibiao.Application of wafer bonding in AlGaInP high brightness LED devices[J].Laser & Optoelectronics Progress,2003,40(7):50-53. |
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| Authors: | PAN Jiaoqing HUANG Baibiao |
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| Abstract: | The external quantum efficiency of(A1xGa1-x)0.5In0.5P light emitting diodes (LED) grown on GaAs substrate by lattice matching is limited by the absorptivity of the GaAs substrate. LED wafer bonding, the attachment of LED epitaxial wafer to another substrate such as GaP transparent substrate, metal mirror substrate or sapphire substrate, increases the light emitting efficiency. The device fabrication and device characteristics of 3 types of wafer bonding are described. |
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| Keywords: | AlGaInP LED transparent substrate mirror substrate |
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