High-performance 0.10-μm CMOS devices operating at roomtemperature |
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Authors: | Iwase M Mizuno T Takahashi M Niiyama H Fukumoto M Ishida K Inaba S Takigami Y Sanda A Toriumi A Yoshimi M |
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Affiliation: | Toshiba Corp., Kawasaki; |
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Abstract: | The authors have fabricated 0.10-μm gate-length CMOS devices that operate with high speed at room temperature. Electron-beam lithography was used to define 0.10-μm polysilicon gate patterns. Surface-channel type p- and n-channel MOSFETs were fabricated using an LDD structure combined with a self-aligned TiSi2 process. Channel doping was optimized so as to suppress punchthrough as well as to realize high transconductance and low drain junction capacitance. The fabricated 0.10-μm CMOS devices have exhibited high transconductance as well as a well-suppressed band-to-band tunneling current, although the short-channel effect occurred somewhat. The operation of a 0.10-μm gate-length CMOS ring oscillator has been demonstrated. The operation speed was 27.7 ps/gate for 2.5 V at room temperature, which is the fastest CMOS switching ever reported |
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