高频LLC谐振变换器的节能降损研究

为了高频LLC谐振变换器达到节能降损的目的,论文建立了确定器件和逻辑链路控制(LLC)谐振变换器设计参数对器件和变压器绕组损耗的影响,量化了氮化镓高电子迁移率晶体管(GaN HEMT)对降低转换器损耗的益处。器件损耗主要是由器件的传导电阻和转换器RMS电流所决定的传导损耗。RMS电流随着不同的励磁电流和死区时间组合而变化,需要根据器件参数正确选择来确保软开关。通过比较了谐振变换器中GaN HEMT和硅金氧半场效晶体管(Si MOSFET)器件的损耗,验证了基于GaN的变换器的峰值效率较高且等效总损耗较低。

Research on Energy Saving and Loss Reduction of High Frequency LLC Resonant Converter

In order to save energy and reduce losses for high frequency LLC resonant converters,the effects of design parame?ters of device and logical link control(LLC)resonant converters on winding losses of devices and transformers are established,and the benefits of GaN HEMT on reducing converter losses are quantified.The device loss is mainly determined by the conduction resis?tance of the device and the RMS current of the converter.RMS current varies with different combinations of excitation current and dead time.It is necessary to select the appropriate device parameters to ensure soft switching.By comparing the losses of GaN HEMT and Si MOSFET devices in resonant converter,it is verified that the peak efficiency of GaN-based converter is higher and the equivalent total loss is lower.