| 硫化物钝化对InAs纳米线光学特性的影响 |
| |
| 引用本文： | 李宝宝,李生娟,陈刚,李世民,王兴军.硫化物钝化对InAs纳米线光学特性的影响[J].红外与毫米波学报,2019,38(5):591-597. |
| |
| 作者姓名： | 李宝宝 李生娟 陈刚 李世民 王兴军 |
| |
| 作者单位： | 上海理工大学材料科学与工程学院,上海,200093;中国科学院上海技术物理研究所红外物理国家重点实验室,上海,200083 |
| |
| 基金项目： | 国家自然科学基金 11874377;上海市自然科学基金 18ZR1445700国家自然科学基金（11874377）；上海市自然科学基金（18ZR1445700） |
| |
| 摘 要： | 针对InAs纳米线表面氧化造成的发光效率低的问题,采用十八硫醇和硫化铵钝化了由化学气相沉积设备生长的闪锌矿结构的InAs纳米线。对硫化物钝化前后的InAs纳米线进行温度依赖的光致发光光谱测试。实验结果表明,十八硫醇和硫化铵钝化的InAs纳米线在25 K温度下的发光效率与未钝化的InAs纳米线相比分别提高了～6倍和～7倍,此外,可以在室温下探测到硫化铵钝化的InAs纳米线的光致发光,这为未来基于InAs纳米线的中红外纳米光子器件提供了可能性。
|
| 关 键 词： | 砷化铟纳米线 硫化物 表面态 光致发光 |
| 收稿时间： | 2019/3/18 0:00:00 |
| 修稿时间： | 2019/7/2 0:00:00 |
The influence of sulfide passivation on optical properties of InAs nanowires |
| |
| LI Bao-Bao,LI Sheng-Juan,CHEN Gang,LI Shi-Min and WANG Xing-Jun.The influence of sulfide passivation on optical properties of InAs nanowires[J].Journal of Infrared and Millimeter Waves,2019,38(5):591-597. |
| |
| Authors: | LI Bao-Bao LI Sheng-Juan CHEN Gang LI Shi-Min and WANG Xing-Jun |
| |
| Affiliation: | School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China,School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
| |
| Abstract: | To solve the problem of low luminescence efficiency caused by the surface oxidation of InAs nanowires, C18H38S and (NH4)2S were adopted to passivate zinc blende (ZB) InAs nanowires synthesized by chemical vapor deposition (CVD). Photoluminescence (PL) spectra of (before and after sulfide passivation) InAs nanowires were performed. The experimental results show that the PL emission efficiency of C18H38S and (NH4)2S passivated InAs nanowires are ~ 6 times and ~ 7 times higher than that of unpassivated InAs nanowires at 25 K, respectively, in addition, the PL of (NH4)2S passivation InAs nanowires is detected at room temperature, which provides a possibility for future InAs nanowires based middle infrared nanophoton devices. |
| |
| Keywords: | InAs nanowires sulfide surface states photoluminescence |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《红外与毫米波学报》浏览原始摘要信息 |
|
点击此处可从《红外与毫米波学报》下载全文 |
|
