Quantum wires and quantum dots defined by lithography with an atomic force microscope |
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Authors: | S LüscherA Fuhrer R HeldT Heinzel K Ensslin M Bichler W Wegscheider |
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Affiliation: | a Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland b Walter Schottky Institut, TU München, 85748 Garching, Germany c Institut für Angewandte und Experimentelle Physik, Universität Regensburg, 93040 Regensburg, Germany |
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Abstract: | Semiconductor nanostructures are realized by patterning AlGaAs/GaAs heterostructures with an atomic force microscope. Steep potential walls, precise pattern transfer and a combination of in-plane and top gates can be achieved with this technique. The electronic properties of nanostructures defined in this way are discussed on two examples, namely a quantum point contact and a single electron transistor. For the quantum point contact we demonstrate quantized conductance at temperatures of 4 K and above. This indicates the strong confinement energy in this system. For the single electron transistor, the realization of special potential shapes and the observation of high-quality Coulomb blockade is shown. |
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Keywords: | Atomic force microscope Nanostructures Lithography |
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