A polycrystalline silicon thin-film transistor with a thinamorphous buffer |
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Authors: | Kyung Wook Kim Kyu Sik Cho Jin Jang |
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Affiliation: | Dept. of Phys., Kyung Hee Univ., Seoul; |
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Abstract: | We have developed a novel, low off-state leakage current polycrystalline silicon (poly-Si) thin-film transistor (TFT) by introducing a very thin hydrogenated amorphous silicon (a-Si:H) buffer on the poly-Si active layer. The a-Si:H buffer is formed on the whole poly-Si and thus no additional mask step is needed. With an a-Si:H buffer on poly-Si, the off-state leakage current of a coplanar TFT is remarkably reduced, while the reduction of the on-state current is relatively small. The poly-Si TFT with an a-Si:H buffer exhibited a field effect mobility of 12 cm2/Vs and an off-state leakage current of 3 fA/μm at the drain voltage of 1 V and the gate voltage of -5 V |
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