The base current degradation of poly-emitter BJTs under AC stress |
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Authors: | Tsun-Lai Hsu Jeng Gong Keh-Yuh Yu |
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Affiliation: | Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan; |
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Abstract: | A simple model for the analysis of the ac stress effect in poly-emitter bipolar transistors is presented. Apart from the reverse-bias induced hot-carrier effects, the forward-bias recovery effect is a key factor under ac stress, it obviously suppresses the base current degradation of the device which is caused during the reverse-bias periods. In this work, we derived the relationship between the excess base current and the stress time for different ac stress conditions. This model is verified with experimental results.<> |
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