| 基于无线功率放大器应用的多指结构SiGe HBT |
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| 引用本文： | 薛春来,时文华,姚飞,成步文,王红杰,余金中,王启明.基于无线功率放大器应用的多指结构SiGe HBT[J].半导体学报,2007,28(4). |
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| 作者姓名： | 薛春来 时文华 姚飞 成步文 王红杰 余金中 王启明 |
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| 作者单位： | 中国科学院半导体研究所集成光电子国家重点联合实验室,北京,100083 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，国家重点基础研究发展计划(973计划)，国家自然科学基金 |
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| 摘 要： | 采用简单的双台面工艺制作了完全平面结构的5个单元、10个发射极指大面积的SiGe HBT.器件表现出了良好的直流和高频特性,最大电流增益β为214.BVCEO为9V,集电极掺杂浓度为1×1017 cm-3,厚度为400nm时,BVCBO为16V.在直流偏置下IC=30mA,VCE=3.0V得到fT和fmax分别为18.0GHz和19.3GHz,1GHz下最大稳定增益为24.5dB,单端功率增益为26.6dB.器件采用了新颖的分单元结构,在大电流下没有明显的增益塌陷现象和热效应出现.
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| 关 键 词： | SiGe HBT 高频 双台面工艺 多指结 |
A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications |
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| Xue Chunlai,Shi Wenhua,Yao Fei,Cheng Buwen,Wang Hongjie,Yu Jinzhong,Wang Qiming.A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J].Chinese Journal of Semiconductors,2007,28(4). |
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| Authors: | Xue Chunlai Shi Wenhua Yao Fei Cheng Buwen Wang Hongjie Yu Jinzhong Wang Qiming |
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| Abstract: | A large area multi-finger configuration power SiGe HBT device (with an emitter area of about 880μm2) was fabricated with 2μm double-mesa technology. The maximum DC current gain β is 214. The BVCEO is up to 10V,and the BVCBO is up to 16V with a collector doping concentration of 1×1017 cm-3 and collector thickness of 400nm. The device exhibits a maximum oscillation frequency fmax of 19.3GHz and a cut-off frequency fT of 18.0GHz at a DC bias point of IC = 30mA and VCE = 3V. MSG (maximum stable gain) is 24.5dB,and U (Mason unilateral gain) is 26.6dB at 1GHz. Due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in theⅠ-Ⅴ characteristics at high collector current. |
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| Keywords: | SiGe HBT power double-mesa technology multi-finger |
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