| 场效应管设计 |
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| 引用本文： | 郭晓丽,张宝才,马瑞芬.场效应管设计[J].信息技术与信息化,1998(4). |
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| 作者姓名： | 郭晓丽 张宝才 马瑞芬 |
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| 作者单位： | 济南市半导体实验所 |
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| 摘 要： | 本文概述了场效应管的分类和设计。设计按常规程序考虑，特殊的ＭＯＳ管还要考虑相关许多其它因素，以及理论与实践结合后的取舍。
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| 关 键 词： | 场效应管，跨导，阈电压，输入阻抗，击穿电压 |
The Layout of the EFT |
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| Guo Xiaoli, Zhang Baocai ,Ma Ruifen.The Layout of the EFT[J].Information Technology & Informatization,1998(4). |
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| Authors: | Guo Xiaoli Zhang Baocai Ma Ruifen |
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| Affiliation: | Guo Xiaoli; Zhang Baocai ;Ma Ruifen |
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| Abstract: | This article Summarizes the distinguish and layout of the Field-Effect-Transistor. Layout depends on the conventional proceeding. For the specific MOSFET, we also think about a number of other factors. In relation to the selection after according to the conjuncture of theory and practice. |
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| Keywords: | FET Trans conductance Input impedance Breakdown voltage |
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