MOCVD epitaxy of InAlN on different templates |
| |
Authors: | Yun Lijun Wei Tongbo Yan Jianchang Liu Zhe Wang Junxi Li Jinmin |
| |
Affiliation: | R&D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
Abstract: | InAlN epilayers were grown on high quality GaN and AlN templates with the same growth parameters.Measurement results showed that two samples had the same In content of ~ 16%,while the crystal quality and surface topography of the InA1N epilayer grown on the AlN template,with 282.3" (002) full width at half maximum (FWHM) of rocking curve,313.5" (102) FWHM,surface roughness of 0.39 nm and V-pit density of 2.8 ×108 cm-2,were better than that of the InAlN epilayer grown on the GaN template,309.3",339.1",0.593 nm and 4.2 × 108 cm-2.A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template.Therefore,the AlN template was a better choice than the GaN template for getting high quality InA1N epilayers. |
| |
Keywords: | InAIN epilayer template crystal quality surface topography |
本文献已被 CNKI 万方数据 等数据库收录! |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|