The effect of gas atmospheres on resistivity of indium tin oxide films at high temperature |
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| Authors: | K Adachi T Hirayama H Sakata |
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| Affiliation: | (1) Department of Industrial Chemistry, Tokai University, 1117, Kitakaname, Hiratsuka-shi, 259-12 Kanagawa, Japan;(2) Research and Development General Division, Asahi Glass Co. Ltd, 2-1-2, Marunouchi, Chiyoda-ku, 100 Tokyo, Japan;(3) Present address: Nippon Carbide Ind. Co., Inc., Vozu, 937 Toyama |
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| Abstract: | The effects of heat treatment in Q2, O2 and N2, and Ar gases on the high temperature (500 C) electrical resistivity of indium tin oxide (ITO) film 52 nm thick prepared by chemical spray pyrolysis method were studied. The partial oxygen pressure effect on the resistivity was found to be
to
. The resistivity changes for cyclic exchange of O2 by Ar gas at 500 C. These lead to the conclusion that chemisorption of oxygen atoms in the film surface is dominant for this thin film, for thicker films such as 640 nm oxygen diffusion is found to occur. The Langmuir model of the monolayer isothermal adsorption of oxygen atoms in the surface is applicable to the rapid change of resistivity. |
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