Thin films deposition with ECR planar plasma source |
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Authors: | Vladimir Tereshin Aleksandr Bovda Vera Bovda Oleg Byrka Vladimir Chebotarev Vladimir Fedorchenko Igor Garkusha |
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Affiliation: | aInstitute of Plasma Physics of the NSC, Kharkov Institute of Physics and Technology, Kharkov 61108, Ukraine |
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Abstract: | The results of film deposition of pure tungsten as well as intermetallic compound of NdFeB type on various substrates using planar ECR plasma source (with multipole magnetic field) developed in our laboratory are presented. The frequency of 2.45 GHz was generated within the magnetic system by two-slot antenna. The ions of ECR argon plasma are used for target sputtering. The main plasma parameters are density 1010 cm−3, Te15 eV, ions energy 20 eV, ion current density 3.5 mA/cm2 at the ultimate magnetron power. Under sputtering of Nd8Fe86B6 target the amorphous films with high adherence and thickness of 5 μm were formed on the substrate. The deposition rate of tungsten films (target biasing 900 V) was 0.59 nm/s. The fine-grained films with high adhesion were obtained. They were tested against heat loads up to 100 J/cm2 produced under irradiation of coatings with plasma streams. |
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Keywords: | ECR discharge Planar ECR plasma source Coating deposition Tungsten films Amorphous films |
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