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Thin films deposition with ECR planar plasma source
Authors:Vladimir Tereshin  Aleksandr Bovda  Vera Bovda  Oleg Byrka  Vladimir Chebotarev  Vladimir Fedorchenko  Igor&#x; Garkusha
Affiliation:aInstitute of Plasma Physics of the NSC, Kharkov Institute of Physics and Technology, Kharkov 61108, Ukraine
Abstract:The results of film deposition of pure tungsten as well as intermetallic compound of NdFeB type on various substrates using planar ECR plasma source (with multipole magnetic field) developed in our laboratory are presented. The frequency of 2.45 GHz was generated within the magnetic system by two-slot antenna. The ions of ECR argon plasma are used for target sputtering. The main plasma parameters are density not, vert, similar1010 cm−3, Tenot, vert, similar15 eV, ions energy not, vert, similar20 eV, ion current density not, vert, similar3.5 mA/cm2 at the ultimate magnetron power. Under sputtering of Nd8Fe86B6 target the amorphous films with high adherence and thickness of 5 μm were formed on the substrate. The deposition rate of tungsten films (target biasing not, vert, similar900 V) was 0.59 nm/s. The fine-grained films with high adhesion were obtained. They were tested against heat loads up to 100 J/cm2 produced under irradiation of coatings with plasma streams.
Keywords:ECR discharge  Planar ECR plasma source  Coating deposition  Tungsten films  Amorphous films
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