Conduction mechanism in anthracene as a function of temperature |
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Authors: | Jeena V Joseph Francis P Xavier |
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Affiliation: | (1) Physics Department, Loyola Institute of Frontier Energy (LIFE), Loyola College, 600 034 Chennai, India |
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Abstract: | Conduction mechanism in anthracene single crystal grown by Bridgman method was carried out. The investigations consisted of
dark- and photo-current variation with respect to (i) applied electric field and (ii) temperature. The applied electric field
ranged from 0·5 to 2·5 kV/cm and the temperature range was between 300 K and 450 K. Photo and dark current variations with
temperature indicate, based on activation energy determination, that a band model can be applied to the conduction process.
The band gap is calculated to be 1·6 eV. The band model consists of a recombination centre 0·37 eV above the valence band
edge and a trap level 0·55 eV below the conduction band edge to which electrons are first thermo-optically excited and then
they are thermally excited into the conduction band. |
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Keywords: | Anthracene photoconductivity band gap |
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