| 利用反应离子刻蚀实现GaAs晶片通孔工艺 |
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| 引用本文： | 顾炯,盛文伟.利用反应离子刻蚀实现GaAs晶片通孔工艺[J].固体电子学研究与进展,1994,14(2):168-171. |
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| 作者姓名： | 顾炯 盛文伟 |
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| 作者单位： | 南京电子器件研究所 |
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| 摘 要： | 贯穿晶片的背面通孔已成为ＧａＡｓＭＭＩＣ和功率ＭＥＳＦＥＴ的有效接地方式。本文介绍了利用Ｃｌ２／ＳｉＣｌ４作为反应气体，以正性光刻胶为掩模的反应离子刻蚀背孔工艺。利用该工艺刻蚀出的深孔具有倾斜的剖面和光滑的侧壁，孔的横向侧蚀小，在５０ｍｍＧａＡｓ圆片上获得了良好的均匀性和重复性。
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| 关 键 词： | 反应离子刻蚀，刻蚀速率，形貌，选择性 |
Dry Etching of Via Holes Through GaAs Substrate |
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| Gu Jiong,Sheng Wenwei.Dry Etching of Via Holes Through GaAs Substrate[J].Research & Progress of Solid State Electronics,1994,14(2):168-171. |
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| Authors: | Gu Jiong Sheng Wenwei |
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| Abstract: | Through substrate via holes are essential in many GaAs MMICs and power MESFETs. A RIE process has been developed to etch via holes using Cl2/SiCl4 mixture and photoresist as the mask material. Smooth V-shape hole profiles with little horizontal undercutting were obtained. The uniformity and reproducibility on 50 mm GaAs wafers were good. |
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| Keywords: | RIE Etch Rate Section Profile Selectivity |
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