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Electroresistance and magnetoresistance in La0.9Ba0.1MnO3 thin films
Affiliation:1. Department of Physics, Capital Normal University, Beijing 100037, PR China;2. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;3. Department of Physics, Nanjing University, Nanjing 210093, PR China;1. IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Department of Physics and Astronomy, Faculty of Sciences, University of Porto, Porto, Portugal;2. CFNUL, University of Lisbon, Lisbon, Portugal;1. Department of Physics, Birla Institute of Technology, Mesra, Ranchi, 835215, Jharkhand, India;2. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50–950, Wroclaw 2, Poland;1. Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;2. Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810, Japan;3. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;4. JST, Transformative Research-Project on Iron Pnictides (TRIP), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;5. Department of Chemistry, Gakushuin University, 1-5-1 Mejiro, Toshima-ku, Tokyo 171-8588, Japan;6. Department of Physics and Astronomy, University of Kentucky, CP 177, Lexington, KY 40506-0055, USA;1. Departamento de Física Aplicada I, Escuela Técnica Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alameda Urquijo s/n, 48013 Bilbao, Spain;2. Department of Physics, University of Warwick, Coventry CV4 7AL, UK
Abstract:The electroresistance and magnetoresistance effects have been investigated in La0.9Ba0.1MnO3 epitaxial thin films. Tensile strain caused by substrate mismatch makes the Curie temperature TC of the film at ~300 K. The influence of an applied dc-current on the resistance in the absence of a magnetic field was studied. Significant change of the peak resistance at different currents was found. The reduction of the peak resistance reaches ~27% with an electric current density up to 1.3 × 105 A cm?2. We also studied colossal magnetoresistance (CMR) effect in the films. Applying a magnetic field of 2 T could lead to a magnetoresistance as large as 42%. The reduction of resistance caused by a current density ~1.3 × 105 A cm?2 was found to be equivalent to the CMR effect caused by 1.5 T near TC. The phenomenon that the resistance in CMR manganites could be easily controlled by the electric current should be of high interest for both fundamental research and practical applications.
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