Characteristics and surface energy of silicon-doped diamond-like carbon films fabricated by plasma immersion ion implantation and deposition |
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| Affiliation: | 1. Departamento de Investigación en Física, Universidad de Sonora, Rosales y Luis Encinas, Hermosillo, Sonora 83000, México;2. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA;3. Facultad de Ciencia y Tecnología, Universidad Tecnológica de Panamá, Panamá, Panamá;4. Departamento de Física, Universidad de Sonora, Rosales y Luis Encinas, Hermosillo, Sonora 83000, México;5. Department of Bioengineering, University of Texas at Dallas, Richardson, TX 75080, USA;6. Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249, USA;1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama Meguro-ku, 152-8552 Tokyo, Japan;2. Department of Electrical Engineering, University of South Florida, 4202 East Fowler Avenue ENB118, Tampa, FL 33620, USA;3. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama Meguro-ku, 152-8552 Tokyo, Japan;1. Laboratoire des Sciences des Procédés et des Matériaux (CNRS UPR 3407), Université Paris 13, Sorbonne Paris Cité, 99 avenue JB Clément, 93430 Villetaneuse, France;2. European Synchrotron Radiation Facility (ESRF), Grenoble, France;3. Institut Pluridisciplinaire Hubert Curien (IPHC-CNRS, UMR7178), Université de Strasbourg, 23 rue du Loess, 67037 Strasbourg, France;4. New Diamond Technology, Saint Petersburg, Russia;1. Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, Sagamihara 252-5258, Japan;2. Toplas Engineering Co., Ltd., Chofu, Tokyo 182-0006, Japan;1. Consiglio Nazionale delle Ricerche–Istituto per la Microelettronica e i Microsistemi, via Gobetti 101, 40129 Bologna, Italy;2. MIST–ER, (Laboratorio di Micro e Submicro Tecnologie Abilitanti dell''Emilia-Romagna), via Gobetti 101, 40129 Bologna, Italy |
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| Abstract: | Diamond-like carbon (DLC) films doped with different silicon contents up to 11.48 at.% were fabricated by plasma immersion ion implantation and deposition (PIII-D) using a silicon cathodic arc plasma source. The surface chemical compositions and bonding configurations were determined by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The results reveal that the sp3 configuration including Si–C bonds increases with higher silicon content, and oxygen incorporates more readily into the silicon and carbon interlinks on the surface of the more heavily silicon-doped DLC films. Contact angle measurements and calculations show that the Si-DLC films with higher silicon contents tend to be more hydrophilic and possess higher surface energy. The surface states obtained by silicon alloying and oxygen incorporation indicate increased silicon oxycarbide bonding states and sp3 bonding states on the surface, and it can be accounted for by the increased surface energy particularly the polar contribution. |
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