| 半桥驱动芯片中LDMOS的设计仿真 |
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| 引用本文： | 付云莹,张国俊.半桥驱动芯片中LDMOS的设计仿真[J].电子元件与材料,2013,32(1):64-67. |
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| 作者姓名： | 付云莹 张国俊 |
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| 作者单位： | 电子科技大学 电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 摘 要： | 借助工艺和器件仿真软件,对一种用于功率MOSFET和IGBT栅极驱动的半桥驱动芯片中的横向高压功率器件LDMOS进行了设计与仿真。该器件采用了双RESURF技术及双层浮空场板结构,通过对双层浮空场板层之间的距离以及双RESURF结构的ptop层的长度和浓度的优化设计,利用传统的Bi-CMOS工艺获得击穿电压689V和比导通电阻273×10–3.cm2的LDMOS。
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| 关 键 词： | 半桥驱动芯片 双层浮空场板 LDMOS 仿真 |
Design and simulation of LDMOS in a half-bridge drive chip |
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| FU Yunying,ZHANG Guojun.Design and simulation of LDMOS in a half-bridge drive chip[J].Electronic Components & Materials,2013,32(1):64-67. |
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| Authors: | FU Yunying ZHANG Guojun |
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| Affiliation: | (State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | With using two-dimension software of simulating devices and the processing steps,the LDMOS device,which was used in a half-bridge drive circuit chip suitable for power MOSFET and IGBT devices,was designed and simulated.The distance between two floating field plates and the concentration and the length of the ptop cayer of the double RESURF structure was optimized and signed.The results show that the LDMOS device has the breakdown voltage of 689 V and the on-resistance is of 273×10–3Ω?cm2 by using traditional Bi-CMOS process. |
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| Keywords: | half-bridge drive chip double floating field plat LDMOS simulation |
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