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A GaAs/GalnP dual junction solar cell grown by molecular beam epitaxy |
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| Affiliation: | [1]Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China [2]Advanced Material Laboratories, Sony Corporation, Atsugi Tec. 4-1-4-1 Asahi-cho, Atsugi-shi, Kanagawa, 243-0014, Japan [3]University of Chinese Academy of Sciences, Beijing 100049, China |
| Abstract: | molecular beam epitaxy III-V semiconductor PN junction solar cell |
| Keywords: | molecular beam epitaxy III-V semiconductor PN junction solar cell |
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