Effect of potassium permanganate on morphological,structural and electro-optical properties of graphene oxide thin films |
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| Authors: | Muhammad Kashif Erdawaty Jaafar Poonam Bhadja Foo Wah Low Siti Kudnie Sahari Shahid Hussain Foo Kai Loong Awais Ahmad Tahani Saad AlGarni Muhammad Shafa Humaira Asghar Saad A Al-Tamrah |
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| Affiliation: | 1. School of Electrical & Information Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072, China;2. LTI Engineering, Project Department, Puchong Business Park 47160, Puchong, Selangor, Malaysia;3. Arthropod Ecology and Biological Control Research Group, Ton Duc Thang University, Ho Chi Minh City, Viet Nam;4. Faculty of Environment and Labour Safety, Ton Duc Thang University, Ho Chi Minh City, Viet Nam;5. Department of Electrical & Electronic Engineering, Lee Kong Chian, Faculty of Engineering & Science, Universiti Tunku Abdul Rahman, Bandar Sungai Long, 43000 Kajang, Selangor, Malaysia;6. Faculty of Engineering, Universiti Malaysia Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia;7. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China;8. Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Malaysia;9. Department of Chemistry, The University of Lahore, Lahore 54590, Pakistan;10. Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia;11. State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China;12. Department of Chemistry, Government College University Faisalabad, 38000, Pakistan |
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| Abstract: | This work investigated the effect of Potassium Permanganate (KMnO4) on graphene oxide (GO) properties, especially on electrical properties. The GO thin films were deposited on a glass substrate using drop casting technique and were analysed by using various type of spectroscopy (e.g. Scanning Electron Microscopy (SEM), Ultra- Violet Visible (UV–VIS), Fourier Transform Infrared (FTIR), X-Ray Diffraction (XRD), optical band gap, Raman Spectroscopy). Furthermore, the electrical experiments were carried out by using current–voltage (I-V) characteristic. The GO thin film with 4.5 g of KMnO4 resulted in higher conductivity which is 3.11 × 10?4 S/cm while GO with 2.5 g and 3.5 g of KMnO4 achieve 2.47 × 10?9 S/cm and 1.07 × 10?7 S/cm, respectively. This further affects the morphological (SEM), optical (band gap, UV–Vis, FTIR, and Raman), and crystalline structural (XRD) properties of the GO thin films. The morphological, elemental, optical, and structural data confirmed that the properties of GO is affected by different amount of KMnO4 oxidizing agent, which revealed that GO can potentially be implemented for electrical and electronic devices. |
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| Keywords: | Potassium permanganate Graphene oxide Oxidizing agent Thin film Electrical GO"} {"#name":"keyword" "$":{"id":"k0035"} "$$":[{"#name":"text" "_":"Graphene Oxide SEM"} {"#name":"keyword" "$":{"id":"k0045"} "$$":[{"#name":"text" "_":"Scanning Electron Microscopy UV–VIS"} {"#name":"keyword" "$":{"id":"k0055"} "$$":[{"#name":"text" "_":"Ultra–Violet Visible FTIR"} {"#name":"keyword" "$":{"id":"k0065"} "$$":[{"#name":"text" "_":"Fourier Transform Infrared XRD"} {"#name":"keyword" "$":{"id":"k0075"} "$$":[{"#name":"text" "_":"X-Ray Diffraction I-V"} {"#name":"keyword" "$":{"id":"k0085"} "$$":[{"#name":"text" "_":"current-voltage |
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