| Cd掺杂BZCN薄膜的制备及其介电性能 |
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| 引用本文： | 张凯,蒋书文,程鹏,张鹰,齐增亮.Cd掺杂BZCN薄膜的制备及其介电性能[J].电子元件与材料,2007,26(5):33-35. |
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| 作者姓名： | 张凯 蒋书文 程鹏 张鹰 齐增亮 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 基金项目： | 高等学校博士学科点专项科研项目 |
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| 摘 要： | 用射频磁控溅射法,在Pt/Si基片上制备了立方烧绿石结构的Cd掺杂Bi1.5Zn0.7Cd0.3Nb1.5O7(BZCN)薄膜。研究了衬底温度对薄膜结构、表面形貌以及介电性能的影响。结果表明,沉积温度为600℃,退火温度为700℃制备的薄膜,在测试频率为100 kHz,测试电场强度为1.33×106 V/cm的条件下,介电可调率达到11.8%,tanδ小于0.004 2。
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| 关 键 词： | 无机非金属材料 Cd掺杂BZCN薄膜 射频磁控溅射 介电性能 介电可调率 |
| 文章编号： | 1001-2028（2007）05-0033-03 |
| 修稿时间： | 2007-01-15 |
Preparation of Cd-doped BZCN thin film and its dielectric properties |
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| ZHANG Kai,JIANG Shu-wen,CHENG Peng,ZHANG Ying,QI Zhen-liang.Preparation of Cd-doped BZCN thin film and its dielectric properties[J].Electronic Components & Materials,2007,26(5):33-35. |
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| Authors: | ZHANG Kai JIANG Shu-wen CHENG Peng ZHANG Ying QI Zhen-liang |
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| Abstract: | The Bi1.5Zn0.7Cd0.3Nb1.5O7(BZCN) thin films of cubic pyrochlore phase were prepared on Pt/Si substrate using RF magnetron sputtering method.Investigated were the effects of substrate temperature on the structures and surface morphology,dielectric properties of films.The BZCN thin films sputtered with a deposited temperature of 600 ℃ and annealed temperature at 700 ℃ showed a dielectric tunability of 11.8 %,tan δ lower than 0.0042 at E of 1.33×106 V/cm and measurement frequency of 100 kHz. |
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| Keywords: | non-metallic inorganic material Cd-doped BZCN thin film RF magnetron sputtering dielectric properties dielectric tunability |
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