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Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem? |
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| Authors: | F La Via F Roccaforte V Raineri M Mauceri A Ruggiero P Musumeci L Calcagno A Castaldini A Cavallini |
| Affiliation: | a CNR-IMM, sez. di Catania, Stradale Primosole 50, 95121, Catania, Italy b Epitaxial Technology Centre, Catania, Italy c Physics Department, Catania University, Catania, Italy d Physics Department, Bologna University, Bologna, Italy |
| Abstract: | The transition from Schottky to ohmic contact in the nickel silicide/SiC system during annealing from 600 to 950 °C was investigated by measuring the electrical properties of the contact and by analyzing the microstructure of the silicide/SiC interface. The graphite clusters formed by carbon atoms during silicidation are uniformly distributed into the silicide layer after annealing at 600 °C and they agglomerate into a thin layer far from the silicide/SiC interface after annealing at 950 °C. At this temperature an increase of the Schottky barrier height was measured, while deep level transient spectroscopy evidences the absence of the 0.5 eV peak related to the carbon vacancies. |
| Keywords: | SiC Ni2Si Contact resistance Schottky |
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