|
|||||
|
|
Growth temperature dependence of epitaxial Gd2O3 films on Si(1 1 1) |
|
| Authors: | G Niu B Vilquin N Baboux C Plossu L Becerra G Saint-Grions G Hollinger |
| Affiliation: | 1. Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Na Slovance 2, 182 21, Prague 8, Czech Republic;2. Institute for Problems of Materials Science, Academy of Sciences of Ukraine, 3 Krzhyzhanovsky St., 03142 Kiev, Ukraine;3. Regional Centre of Advanced Technologies and Materials, Joint Laboratory of Optics of Palacky University and Institute of Physics of Academy of Science of the Czech Republic, Faculty of Science, Palacky University, 17, Listopadu 12, 77146 Olomouc, Czech Republic;4. Regional Centre of Advanced Technologies and Materials, Department of Experimental Physics, Faculty of Science, Palacky University, 17, Listopadu 12, 77146 Olomouc, Czech Republic |
| Abstract: | This article reports on the epitaxy of crystalline high κ oxide Gd2O3 layers on Si(1 1 1) for CMOS gate application. Epitaxial Gd2O3 thin films have been grown by Molecular Beam Epitaxy (MBE) on Si(1 1 1) substrates between 650 and 750 °C. The structural and electrical properties were investigated depending on the growth temperature. The C–V measurements reveal that equivalent oxide thickness (EOT) equals 0.7 nm for the sample deposited at the optimal temperature of 700 °C with a relatively low leakage current of 3.6 × 10?2 A/cm2 at |Vg ? VFB| = 1 V. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |
