| 砷掺杂基区n-on-p长波光伏碲镉汞探测器的光电特性 |
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| 引用本文： | 刘斌,周文洪,李海滨,邓屹,胡晓宁.砷掺杂基区n-on-p长波光伏碲镉汞探测器的光电特性[J].激光与红外,2009,39(5):510-513. |
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| 作者姓名： | 刘斌 周文洪 李海滨 邓屹 胡晓宁 |
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| 作者单位： | 中国科学院上海技术物理研究所材器中心,上海,200083 |
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| 摘 要： | 报道了砷掺杂基区n-on-p长波碲镉汞平面结器件的电流电压特性、光谱响应特性，并同p型汞空位n-on-p长波碲镉汞平面结器件进行对比分析，发现砷掺杂基区长波器件的很多性能如优值R0A、电流响应率、黑体探测率都要优于汞空位基区长波器件。
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| 关 键 词： | 碲镉汞 光伏探测器 砷掺杂 暗电流 |
Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector |
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| LIU Bin,ZHOU Wen-hong,LI Hai-bin,DENG Yi,HU Xiao-ning.Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector[J].Laser & Infrared,2009,39(5):510-513. |
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| Authors: | LIU Bin ZHOU Wen-hong LI Hai-bin DENG Yi HU Xiao-ning |
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| Affiliation: | Center of Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China |
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| Abstract: | The current-voltage and spectral response characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p planar photodiode are reported in this paper.The arsenic-doped base region long-wavelength HgCdTe n-on-p planar photodiode was compared and analyzed with Hg vacancy long-wavelength HgCdTe n-on-p planar photodiode,and it was found that the performance of the former was superior to the latter,such as the R0A products,the current responsivity,and the blackbody detectivity. |
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| Keywords: | R0A |
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