| 高对比度、高均匀性材料GaAs/AlGaAs多量子阱空间光调制器 |
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| 引用本文： | 黄寓洋,刘惠春,Wasilewski Z,Buchanan M,Laframboise S R,杨晨,崔国新,边历峰,杨辉,张耀辉.高对比度、高均匀性材料GaAs/AlGaAs多量子阱空间光调制器[J].半导体学报,2010,31(3):034007-4. |
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| 作者姓名： | 黄寓洋 刘惠春 Wasilewski Z Buchanan M Laframboise S R 杨晨 崔国新 边历峰 杨辉 张耀辉 |
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| 作者单位： | Institute;Semiconductors;Chinese;Academy;Sciences;Suzhou;Nano-Tech;Nano-Bionics;Microstructural;National;Research;Council;Ottawa;Canada; |
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| 摘 要： | 本文报道了GaAs/AlGaAs 多量子阱空间光调制器的最新研究进展。使用MBE生长了3英寸材料，其横向均匀性好于0.1%, 法布里-珀罗腔谐振波长变化小于0.9nm。利用调节层腐蚀进行调节以后，在6.7V调制电压下实现了102的对比度。理论和实验均表明，调节层腐蚀能够在在宽范围内调节平衡条件，从而实现多量子阱空间光调制器的高对比度。
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| 关 键 词： | 空间光调制器 高对比度 多量子阱 高均匀度 厚度均匀性 波长变化 偏置电压 晶圆片 |
| 收稿时间： | 9/17/2009 4:21:21 PM |
High contrast ratio, high uniformity multiple quantum well spatial light modulators |
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| Huang Yuyang,Liu H C,Wasilewski Z,Buchanan M,Laframboise S R,Yang Chen,Cui Guoxin,Bian Lifeng,Yang Hui and Zhang Yaohui.High contrast ratio, high uniformity multiple quantum well spatial light modulators[J].Chinese Journal of Semiconductors,2010,31(3):034007-4. |
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| Authors: | Huang Yuyang Liu H C Wasilewski Z Buchanan M Laframboise S R Yang Chen Cui Guoxin Bian Lifeng Yang Hui and Zhang Yaohui |
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| Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China; Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada;Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada;Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada;Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China |
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| Abstract: | Our latest research results on GaAs-AlGaAs multiple quantum well spatial light modulators are presented. The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1%and the variation of cavity resonance wavelength within the wafer is only 0.9 nm.A contrast ratio(CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer.Both theoretical and experimental results demonstrate that inc... |
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| Keywords: | spatial light modulator multiple quantum well uniformity contrast ratio adjust layer matching condition |
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