Modeling of submicrometer gate GaAs field effect transistors

Before describing the mainFet modelings today available, the main technological evolutions ofMesfet andTegfet are summarized. It is brought some information on the various physical effects that occur in the devices and that must be taken into account in the models. It is shown that the different kinds of modelings (Monte Carlo, two dimensional, one dimensional) constitute a continuous chain, where the different elements appear strictly complementary. Finally, the present situation concerning modeling ofMesfet andTegfet will be presented.