| CdSe薄膜晶体管制备工艺的研究 |
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| 引用本文： | 景玉梅,李志明,李菊生,叶如华.CdSe薄膜晶体管制备工艺的研究[J].液晶与显示,2000,15(1):35-39. |
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| 作者姓名： | 景玉梅 李志明 李菊生 叶如华 |
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| 作者单位： | 中国科学院,长春光学精密机械与物理研究所,吉林,长春,130021 |
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| 基金项目： | 国家科技部“863”计划(715-003—0070)资助项目 |
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| 摘 要： | 对ＣｄＳｅ－ＴＦＴ的制作工艺进行了探索，对ＴＦＴ矩阵的关键材料－半导体层ＣｄＳｅ的性质进行了研究。利用ＸＣ－３６型高阻仪研究了ＣｄＳｅ薄膜电阻率随蒸发速度的变化，用三探针法和Ｃｕｒｖｅ Ｔｒａｃｅｒ ＱＴ－２对ＴＦＴ样管的基本性能进行了测试，得到载流子迁移率为１７０ｃｍ２／Ｖ．ｓ，ＯＦＦ态电流小于１０＾－１０Ａ，ＯＮ态电流为１０＾－４Ａ。
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| 关 键 词： | 薄膜晶体管 迁移率 硒化镉 |
| 文章编号： | 1007—2780(2000)01-0035-05 |
| 修稿时间： | 2000-01-21 |
Preparing Process of CdSe-TFT |
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| JING Yu-met, LI Zhi-ming, LI Ju-sheng, YE Ru-hua.Preparing Process of CdSe-TFT[J].Chinese Journal of Liquid Crystals and Displays,2000,15(1):35-39. |
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| Authors: | JING Yu-met LI Zhi-ming LI Ju-sheng YE Ru-hua |
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| Abstract: | The preparing process of CdSe-TFT was studied. Especially the growth of CdSe film, the semiconductor layer of the TFT was investigated. The resistivity of the film vs. The evporation rate was measured by a The resistivity of the film vs. The evporation rate was measured by a The resistivity of the film vs. The evporation rate was measured by a high impedance tester. The electric characters of the TFT were measured by using Curve Tracer QT-2. The mobility of carrier is 170cm /V-s; /OFF, respectively. |
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| Keywords: | CdSe thin film transistor mobility |
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