Impact of temperature-accelerated voltage stress on PMOS RF performance |
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Authors: | Chuanzhao Yu Yi Liu Sadat A Yuan JS |
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Affiliation: | Electr. & Comput. Eng. Dept., Univ. of Central Florida, Orlando, FL, USA; |
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Abstract: | The thermal electrochemical analysis and modeling of negative bias temperature instability, oxide breakdown, and hot-carrier injection effects on metal-oxide-semiconductor devices are performed. The temperature-accelerated voltage stress has been examined experimentally. A subcircuit model aiming to evaluate the stress-induced degradation via simulation is developed. The measured and simulated performance for fresh and stressed devices at different temperatures is presented. The radio frequency performance degradation of a test circuit due to temperature-accelerated voltage stress is investigated. |
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