| 三栅MOSFET阈值电压模型 |
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| 引用本文： | 刘建,石新智,林海,王高峰.三栅MOSFET阈值电压模型[J].微电子学,2006,36(4):400-402,406. |
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| 作者姓名： | 刘建 石新智 林海 王高峰 |
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| 作者单位： | 1. 武汉大学,物理科学与技术学院,湖北,武汉,430072;武汉大学,微电子与信息技术研究院,湖北,武汉,430072
2. 武汉大学,微电子与信息技术研究院,湖北,武汉,430072 |
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| 基金项目： | 国家自然科学基金重大项目(90307017)，国家自然科学基金资助项目(60444004) |
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| 摘 要： | 根据三栅(TG)MOSFET二维数值模拟的结果,分析了TG MOSFET中的电势分布,得出了在硅体与掩埋层接触面的中心线上的电势随栅压变化的关系;通过数学推导,给出了基于物理模型的阈值电压的解析表达式;并由此讨论了多晶硅栅掺杂浓度、硅体中掺杂浓度、硅体的宽度和高度以及栅氧化层厚度对阈值电压的影响;得出在TG MOSFET器件的阈值电压设计时,应主要考虑多晶硅栅掺杂浓度、硅体中掺杂浓度和硅体的宽度等参数的结论。
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| 关 键 词： | 三栅MOSFET 阈值电压 数值模拟 |
| 文章编号： | 1004-3365（2006）04-0400-03 |
| 收稿时间： | 2005-10-10 |
| 修稿时间： | 2005-10-102005-12-08 |
Threshold Voltage Model for Tri-Gate MOSFET's |
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| LIU Jian,SHI Xin-zhi,LIN Hai,WANG Gao-feng.Threshold Voltage Model for Tri-Gate MOSFET''''s[J].Microelectronics,2006,36(4):400-402,406. |
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| Authors: | LIU Jian SHI Xin-zhi LIN Hai WANG Gao-feng |
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| Affiliation: | 1. School of Physics and Technology, Wuhan University, Wuhan , Hubei 430072, P. R. China ; Institute of Microelectronics and Information Technology, Wuhan University, Wuhan , Hubei 430072, P. R. China |
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| Abstract: | The electric potential distribution in Si body of Tri-Gate MOSFET was obtained by 2D numerical simulation,and an analytic model of threshold voltage was established.Threshold voltage calculated according to the model is matched with results of numerical simulation.Effects of polysilicon gate doping concentration,Si body doping concentration,the width and height of Si body and the gate oxide thickness on threshold voltage were investigated.It is concluded that Si body doping concentration,gate doping concentration and the width of Si body are the most important parameters for designing threshold voltage. |
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| Keywords: | Tri-Gate MOSFET Threshold voltage Numerical simulation |
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