一种新型高性能FinFET的设计与特性分析

针对CMOS器件随着技术节点的不断减小而产生的短沟道效应和漏电流较大等问题,设计了一种新型直肠形鳍式场效应晶体管(FinFET),并将该新型器件与传统的矩形结构和梯形结构的FinFET通过Sentaurus TCAD仿真软件进行对比。结果表明,当栅极长度控制在10 nm时,新型器件相比于另外两种传统的FinFET具有更小的鳍片尺寸,且鳍片高度不低于抑制短沟道效应的临界值。仿真结果显示,这种新型的FinFET具有更好的开关特性和亚阈值特性。同时,该器件在射频方面的特性参数也显示出该器件具有较高性能,并有一定的实际应用价值。

Design and Characteristic Analysis of a Novel High-Performance FinFET

In order to solve the problems of the short channel effect and the large leakage current of CMOS devices caused by the decrease of technology nodes,a new rectzoidal fin field effect transistor(FinFET)was designed.The new device was compared with the traditional rectangular structure and trapezoidal structure FinFETs by using Sentaurus TCAD simulation software.The results show that when the gate length is controlled at 10 nm,the new device has a smaller fin size than the other two traditional FinFETs,and the fin height is hot lower than the critical value to suppress the short channel effect.The simulation results show that this new FinFET has better switching characteristics and sub-threshold characteristics.At the same time,the RF characteristic parameters of the device also show that this device has higher performance and a certain practical application value.