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Electrolyte-gated transistors for neuromorphic applications
作者姓名:Heyi Huang  Chen Ge  Zhuohui Liu  Hai Zhong  Erjia Guo  Meng He  Can Wang  Guozhen Yang  Kuijuan Jin
作者单位:Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;School of Physical Sciences, University of Chinese Academy of Science, Beijing 100049, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;School of Physical Sciences, University of Chinese Academy of Science, Beijing 100049, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;School of Physical Sciences, University of Chinese Academy of Science, Beijing 100049, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;School of Physical Sciences, University of Chinese Academy of Science, Beijing 100049, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;School of Physical Sciences, University of Chinese Academy of Science, Beijing 100049, China;Songshan Lake Materials Laboratory, Dongguan 523808, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;School of Physical Sciences, University of Chinese Academy of Science, Beijing 100049, China;Songshan Lake Materials Laboratory, Dongguan 523808, China
基金项目:and the Key Research Program of Frontier Sci-ences CAS;the National Natural Science Foundation of China;This work was supported by the National Key R&D Pro-gram of China;the Youth Innovation Promotion Association of CAS
摘    要:Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck.To enhance computing performance,neuromorphic computing systems that can simulate the function of the human brain are being developed.Artificial synapses are essential electronic devices for neuromorphic architectures,which have the ability to perform signal processing and storage between neighboring artificial neurons.In recent years,electrolyte-gated transistors(EGTs)have been seen as promising devices in imitating synaptic dynamic plasticity and neuromorphic applications.Among the various electronic devices,EGT-based artificial synapses offer the benefits of good stability,ultra-high linearity and repeated cyclic symmetry,and can be constructed from a variety of materials.They also spatially separate“read”and“write”operations.In this article,we provide a review of the recent progress and major trends in the field of electrolyte-gated transistors for neuromorphic applications.We introduce the operation mechanisms of electric-double-layer and the structure of EGT-based artificial synapses.Then,we review different types of channels and electrolyte materials for EGT-based artificial synapses.Finally,we review the potential applications in biological functions.

关 键 词:electrolyte-gated  transistors  neuromorphic  comupting  artificial  synapses

Electrolyte-gated transistors for neuromorphic applications
Heyi Huang,Chen Ge,Zhuohui Liu,Hai Zhong,Erjia Guo,Meng He,Can Wang,Guozhen Yang,Kuijuan Jin.Electrolyte-gated transistors for neuromorphic applications[J].Chinese Journal of Semiconductors,2021,42(1):73-85.
Authors:Heyi Huang  Chen Ge  Zhuohui Liu  Hai Zhong  Erjia Guo  Meng He  Can Wang  Guozhen Yang  Kuijuan Jin
Abstract:Von Neumann computers are currently failing to follow Moore's law and are limited by the von Neumann bottleneck.To enhance computing performance,neuromorphic computing systems that can simulate the function of the human brain are being developed.Artificial synapses are essential electronic devices for neuromorphic architectures,which have the ability to perform signal processing and storage between neighboring artificial neurons.In recent years,electrolyte-gated transistors(EGTs)have been seen as promising devices in imitating synaptic dynamic plasticity and neuromorphic applications.Among the various electronic devices,EGT-based artificial synapses offer the benefits of good stability,ultra-high linearity and re-peated cyclic symmetry,and can be constructed from a variety of materials.They also spatially separate"read"and"write"opera-tions.In this article,we provide a review of the recent progress and major trends in the field of electrolyte-gated transistors for neuromorphic applications.We introduce the operation mechanisms of electric-double-layer and the structure of EGT-based arti-ficial synapses.Then,we review different types of channels and electrolyte materials for EGT-based artificial synapses.Finally,we review the potential applications in biological functions.
Keywords:electrolyte-gated transistors  neuromorphic comupting  artificial synapses
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