Li、Mn掺杂对MgCoNiCuZnO5导电性能影响的研究

以Li2CO3和MnO分别为Li源和Mn源，采用高温固相烧结的方法，合成Li、Mn掺杂的MgCoNiCuZnO5高熵金属氧化物（High-entropy oxides, HEOx）材料(Mg,Co,Ni,Cu,Zn)0.95Li0.05O0.975和(Mg, Co, Ni, Cu, Zn)0.95Mn0.05O。并与未掺杂的HEOx进行对比，研究了Li和Mn两种不同金属元素对HEOx材料的相结构和导电性能的影响。交流阻抗的研究结果表明，Li、Mn掺杂后HEOx导电性明显提高，同时，紫外-可见-近红外吸收光谱表明了三种材料都表现出半导体特性，其带隙宽度在1.2~1.7 eV之间，并且Li、Mn掺杂后HEOx的直接带隙变小，Li-HEOx为1.23 eV，Mn-HEOx为1.38 eV。

Study on the effect of Li/Mn doping on the conductivity of MgCoNiCuZnO5

Li/Mn doped MgCoNiCuZnO5 (HEOx) high entropy metal oxide materials (Mg, Co, Ni, Cu, Zn) 0.95Li0.05O0.975 and (Mg, Co, Ni, Cu, Zn)0.95Mn0.05O were synthesized by high temperature solid state sintering using Li2CO3 and MnO as Li and Mn sources, respectively. The effects of two different metal elements, Li and Mn, on the phase structure and electrical conductivity of HEOx materials were studied and compared with those of undoped HEOx. The results of AC impedance study show that the conductivity of HEOx doped with Li and Mn is improved greatly. UV-vis-NIR absorption spectra show that the three materials all exhibit semiconductive properties, the band gap width is between 1.2 eV and 1.7 eV, and the direct band gap of HEOx doped with Li and Mn decreases, and the Li-HEOx is 1.23 eV, Mn-HEOx is 1.38 eV.