High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric |
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Authors: | Rongsheng Chen Wei ZhouMeng Zhang Hoi Sing Kwok |
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Affiliation: | Center for Display Research, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
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Abstract: | High performance self-aligned top-gate zinc oxide (ZnO) thin film transistors (TFTs) utilizing high-k Al2O3 thin film as gate dielectric are developed in this paper. Good quality Al2O3 thin film was deposited by reactive DC magnetron sputtering technique using aluminum target in a mixed argon and oxygen ambient at room temperature. The resulting transistor exhibits a field effect mobility of 27 cm2/V s, a threshold voltage of − 0.5 V, a subthreshold swing of 0.12 V/decade and an on/off current ratio of 9 × 106. The proposed top-gate ZnO TFTs in this paper can act as driving devices in the next generation flat panel displays. |
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Keywords: | Aluminum oxide Self‐aligned structure Thin film transistors Zinc oxide |
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