| 金离子注入二氧化锆薄膜的单极电阻转变特性研究 |
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| 引用本文： | 刘琦,龙世兵,管伟华,张森,刘明,陈军宁.金离子注入二氧化锆薄膜的单极电阻转变特性研究[J].半导体学报,2009,30(4):042001-4. |
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| 作者姓名： | 刘琦 龙世兵 管伟华 张森 刘明 陈军宁 |
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| 作者单位： | Laboratory;Nano-Fabrication;Novel;Devices;Integrated;Technology;Institute;Microelectronics;Chinese;Academy;Sciences;College;Electronics;Anhui;University; |
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| 基金项目： | 国家基础研究重大项目基金 |
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| 摘 要： | The resistive switching characteristics of Au＋-implanted ZrO2 films are investigated. The Au/Cr/Au＋ -implanted-ZrO2/n＋-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au＋-implanted-ZrO2/n＋-Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.
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| 关 键 词： | ZrO2薄膜 开关特性 电阻 单极 Au 植入 夹心结构 金离子 |
| 收稿时间： | 9/5/2008 5:28:43 PM |
Unipolar resistive switching of Au+-implanted ZrO2 films |
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| Liu Qi,Long Shibing,Guan Weihu,Zhang Sen,Liu Ming and Chen Junning.Unipolar resistive switching of Au+-implanted ZrO2 films[J].Chinese Journal of Semiconductors,2009,30(4):042001-4. |
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| Authors: | Liu Qi Long Shibing Guan Weihu Zhang Sen Liu Ming and Chen Junning |
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| Affiliation: | Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;College of Electronics and Technology, Anhui University, Hefei 230039, China;Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;College of Electronics and Technology, Anhui University, Hefei 230039, China |
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| Abstract: | The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+-implanted-ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted-ZrO2/n+-Si structure shows good retention char-acteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions. |
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| Keywords: | RRAM resistive switching ion implantation ZrO2 |
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