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Properties of WN x /GaAs Schottky contacts prepared by ion implantation of nitrogen |
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| Authors: | T Lalinsky J Kuzmík D Gregu?ová ? Mozolová J Breza M Feci?ko P Seidl |
| Affiliation: | (1) Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Czecho-Slovakia;(2) Department of Microelectronics, Slovak Technical University, Ilkovi ova 3, 812 19 Bratislava, Czecho-Slovakia;(3) Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University, Suchbatárova 2, 160 00 Praha 6, Czecho-Slovakia |
| Abstract: | The formation of WN x /GaAs Schottky contacts using selective ion implantation of nitrogen into the sputtered tungsten film has been demonstrated. The contacts were characterized by Auger electron spectroscopy and current-voltage measurements. The composition of WN x films and the thermal stability of WN x /GaAs contacts were investigated. Good thermal stability of WN x /GaAs contacts compared with a W/GaAs contact was observed after capless rapid thermal annealing at 450, 800 and 950°C for 10 s. |
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